NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
T amb = 25 ° C unless otherwise speci?ed
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V RWM
reverse stand-off voltage
-
-
5
V
I RM
reverse leakage current
V RWM = 5 V;
-
5
100
nA
see Figure 6
V (CL)R
V (BR)
r dif
C d
clamping voltage
breakdown voltage
differential resistance
diode capacitance
I PP = 1 A
I PP = 12 A
I R = 1 mA
I R = 1 mA
V R = 0 V; f = 1 MHz;
[1][2]
[1][2]
-
-
5.5
-
-
-
-
-
-
35
10
14
9.5
50
45
V
V
V
?
pF
see Figure 5
[1]
[2]
Non-repetitive current pulse 8/20 μ s exponentially decaying waveform according to IEC61000-4-5; see Figure 1 .
Measures from pin 1 to pin 2.
PESD5V0S1BA_BB_BL_4
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
5 of 15
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